MBR140SFT1G

Surface Mount, Schottky Power Rectifier, 40V Repetitive Reverse Voltage, 10,000 V/μs

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PartNumber:: MBR140SFT1G

Brand:: ON Semiconductor - ON | Pack: SOD | D/C: 10+

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Products Upload time: 2011-08-29

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Product Summary

The MBR140SFT1G uses the Schottky Barrier principle with a large area metal to silicon power diode. The MBR140SFT1G is ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. This package also provides an easy to work with alternative to leadless 34 package style. Because of its small size, MBR140SFT1G is ideal for use in portable and battery powered products such as cellular and cordless phones, chargers, notebook computers, printers, PDAs and PCMCIA cards. Typical applications are ac/dc and dc.dc converters, reverse battery protection, and Oring of multiple supply voltages and any other application where performance and size are critical.

Parametrics

MBR140SFT1G absolute maximum ratings: (1)Peak Repetitive Reverse Voltage,Working Peak Reverse Voltage; (2)DC Blocking Voltage: 40 V; (3)Average Rectified Forward Current (At Rated VR, TL = 112℃): 1.0 A; (4)Peak Repetitive Forward Current (At Rated VR, Square Wave, 100 kHz, TL = 95℃): 2.0 A; (5)Non Repetitive Peak Surge Current, IFSM: 30 A; (6)Storage Temperature Tstg: -55 to 150℃; (7)Operating Junction Temperature TJ: -55 to 125 ℃; (8)Voltage Rate of Change (Rated VR, TJ = 25℃) dv/dt: 10,000 V/μs.

Features

MBR140SFT1G features: (1)Guardring for Stress Protection; (2)Low Forward Voltage; (3)125℃ Operating Junction Temperature; (4)Epoxy Meets UL94, V0 at 1/8,; (5)Package Designed for Optimal Automated Board Assembly; (6)ESD Ratings: Machine Model, C; (7)ESD Ratings: Human Body Model, 3B.