(Hong Kong)
Product Summary
The IRF7309TEPBF is HEXFET Power MOSFET. Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. The IRF7309TEPBF has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications.
Parametrics
IRF7309TEPBF absolute maximum ratings:(1)10 Sec. Pulse Drain Current, VGS @ 10V:N-Channel:4.7A,P-Channel:-3.5A;(2)Continuous Drain Current, VGS @ 10V:N-Channel:4.0A,P-Channel:-3.0A;(3)Continuous Drain Current, VGS @ 10V:N-Channel:3.2A,P-Channel:-2.4A;(4)Pulsed Drain Current:N-Channel:16A,P-Channel:-12A;(5)Pulsed Drain Current:1.4W;(6)Linear Derating Factor (PCB Mount):0.011W/℃;(7)Gate-to-Source Voltage:± 20V;(8)Peak Diode Recovery dv/dt:N-Channel:6.9V/ns,P-Channel:-6.0V/ns;(9)Junction and Storage Temperature Range:-55℃ to +150℃.
Features
IRF7309TEPBF features:(1)Generation V Technology;(2)Generation V Technology;(3)Dual N and P Channel Mosfet;(4)Surface Mount;(5)Available in Tape & Reel;(6)Dynamic dv/dt Rating;(7)Dynamic dv/dt Rating.
Diagrams
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IRF710, SiHF710 |
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IRF710_R4943 |
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IRF7101 |
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IRF7101PBF |
International Rectifier |
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IRF7101TR |
International Rectifier |
MOSFET N-CH 20V 3.5A 8-SOIC |
Data Sheet |
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