Product Summary

The SUD40N10-25 is a N-Channel 100-V (D-S) 175℃ MOSFET.

Parametrics

SUD40N10-25 absolute maximum ratings: (1)Drain-Source Voltage: 100V; (2)Gate-Source Voltage VGS: ±20V; (3)Continuous Drain Current (TJ = 175℃), TC = 25℃, ID: 40A; TC = 125℃: 23A; (4)Pulsed Drain Current IDM: 70 A; (5)Continuous Source Current (Diode Conduction) IS: 40A; (6)Avalanche Current IAR 40A; (7)Repetitive Avalanche Energy (Duty Cycle ≤ 1%) L = 0.1 mH EAR: 80 mJ; (8)Operating Junction and Storage Temperature Range TJ, Tstg: –55 to 175℃.

Features

SUD40N10-25 features: (1)Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 μA 100V; (2)Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250μA 1.0 to 3.0V; (3)Gate-Body Leakage IGSS: ±100 nA; (4)Zero Gate Voltage Drain Current IDSS: 50 μA; VDS = 80 V, VGS = 0 V, TJ = 175℃: 250μA; (5)On-State Drain Current ID(on) VDS = 5 V, VGS = 10 V: 70 A; VGS = 10 V, ID = 40 A: 0.02 to 0.025A; (6)Drain-Source On-State Resistance rDS(on): 0.05Ω; VGS = 10 V, ID = 40 A, TJ = 175℃: 0.063Ω; VGS = 4.5 V, ID = 20 A: 0.022 to 0.028Ω; (7)Forward Transconductance gfs: VDS = 15 V, ID = 40 A: 70 S.

Diagrams

SUD40N10-25 top view

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
SUD40N10-25
SUD40N10-25

Vishay/Siliconix

MOSFET 100V 40A 33W

Data Sheet

Negotiable 
SUD40N10-25-E3
SUD40N10-25-E3

Vishay/Siliconix

MOSFET 100V 40A 33W

Data Sheet

0-1: $1.21
1-10: $1.12
10-100: $1.08
100-250: $1.04
SUD40N10-25-T4-E3
SUD40N10-25-T4-E3


MOSFET N-CH D-S 100V TO252

Data Sheet

0-2500: $0.90