Product Summary

Thr SPB12N50C3 is a Cool MOS Power Transistor.

Parametrics

SPB12N50C3 absolute maximum ratings: (1)Continuous drain current, TC = 25℃, ID: 11.6A; (2)Continuous drain current, TC = 100℃ ID: 7A ; (3)Pulsed drain current, tp limited by Tjmax, ID puls: 34.8A ; (4)Avalanche energy, single pulse, ID=2.5A, VDD=50V, EAS: 340mJ ; (5)Avalanche energy, repetitive tAR limited by Tjmax, ID=11.6A, VDD=50V, EAR: 0.6mJ ; (6)Avalanche current, repetitive tAR limited by Tjmax, IAR: 11.6A ; (7)Gate source voltage, VGS: ±20V ; (8)Gate source voltage AC (f >1Hz), VGS: ±30V; (9)Power dissipation, TC = 25℃, Ptot: 33W ; (10)Operating and storage temperature, Tj , Tstg: -55 to +150℃ ; (11)Drain Source voltage slope, VDS = 400 V, ID = 11.6 A, Tj = 125℃, dv/dt: 50V/ns.

Features

SPB12N50C3 features: (1)New revolutionary high voltage technology; (2)Ultra low gate charge; (3)Periodic avalanche rated; (4)Extreme dv/dt rated; (5)Ultra low effective capacitances; (6)Improved transconductance.

Diagrams

SPB12N50C3 simplified diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
SPB12N50C3
SPB12N50C3
Infineon Technologies
MOSFET COOL MOS N-CH 560V 11.6A
Data Sheet
0-1: $1.62
1-10: $1.30
10-100: $1.17
100-250: $0.98
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SPB12N50C3
SPB12N50C3
Infineon Technologies
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Data Sheet
0-1: $1.62
1-10: $1.30
10-100: $1.17
100-250: $0.98
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