(Hong Kong)
Product Summary
The NTD24N06G is a Power MOSFET N-Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.
Parametrics
NTD24N06G absolute maximum ratings: (1)Drain to Source Voltage VDSS: 60 Vdc; (2)Drain.to.Gate Voltage (RGS = 10 MΩ) VDGR: 60 Vdc; (3)Gate to Source Voltage: Continuous: ±20Vdc; Non repetitive: ±30Vdc; (4)Drain Current: Continuous @ TA = 25℃, TJ = 150℃: 24Adc; Continuous @ TA = 25℃, TJ = 175℃: 27Adc; Continuous @ TA = 100℃, TJ = 175℃: 19Adc; Single Pulse, TJ = 175℃: 80Apk; (5)Total Power Dissipation @ TA = 25℃: 62.5 W; (6)Total Power Dissipation: 1.88W; (7)Total Power Dissipation @ TA = 25℃: 1.36W; (8)Operating and Storage Temperature Range TJ, Tstg: -55 to; (9)+175℃; (10)Single Pulse Drain to Source Avalanche Energy Starting TJ = 25℃: 162 mJ; (11)Thermal Resistance: Junction to Case: 2.4 ℃/W; Junction to Ambient: 80℃/W; Junction to Ambient: 110℃/W; (12)Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds: 260 ℃.
Features
NTD24N06G features: (1)Drain to Source Breakdown Voltage: 71.1 Vdc; (2)Temperature Coefficient (Positive): 70.4 mV/℃; (3)Zero Gate Voltage Drain Current: (VDS = 60 Vdc, VGS = 0 Vdc): 1.0 μAdc; (VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150℃); (4)IDSS: 10μAdc; (5)Gate.Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc): ±100 nAdc; (6)Gate Threshold Voltage: 2.0 to 4.0 Vdc; (7)Threshold Temperature Coefficient (Negative): 7.0 mV/℃; (8)Static Drain.to.Source On.Resistance: (VGS = 10 Vdc, ID = 10 Adc): 32 to 42 mΩ; (VGS = 10 Vdc, ID = 12 Adc): 32 mΩ; (9)Static Drain.to.Source On.Resistance: (VGS = 10 Vdc, ID = 20 Adc): 0.8 to 1.15 Vdc; (VGS = 10 Vdc, ID = 24 Adc): 0.8Vdc;(VGS = 10 Vdc, ID = 12 Adc, TJ = 150℃): 0.7 Vdc; (10)Forward Transconductance: 15 mhos.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 NTD24N06G |
ON Semiconductor |
MOSFET 24V 60A N-Channel |
Data Sheet |
Negotiable |
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Quantity | ||||||||||||
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NTD20N03L27 |
ON Semiconductor |
MOSFET 30V 20A N-Channel |
Data Sheet |
Negotiable |
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NTD20N03L27-001 |
ON Semiconductor |
MOSFET 30V 20A N-Channel |
Data Sheet |
Negotiable |
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NTD20N03L27-1G |
ON Semiconductor |
MOSFET 30V 20A N-Channel |
Data Sheet |
Negotiable |
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NTD20N03L27G |
ON Semiconductor |
MOSFET 30V 20A N-Channel |
Data Sheet |
Negotiable |
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NTD20N03L27T4 |
ON Semiconductor |
MOSFET 30V 20A N-Channel |
Data Sheet |
Negotiable |
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NTD20N03L27T4G |
ON Semiconductor |
MOSFET 30V 20A N-Channel |
Data Sheet |
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