(Hong Kong)
Product Summary
The MRFE6S9060NR1 is a RF Power Field Effect Transistor. It is a N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device makes MRFE6S9060NR1 ideal for large - signal, common - source amplifier applications in 28 volt base station equipment.
Parametrics
MRFE6S9060NR1 absolute maximum ratings: (1)Drain-Source Voltage VDSS: - 0.5 to +66 Vdc; (2)Gate-Source Voltage VGS: - 0.5 to +12 Vdc; (3)Maximum Operation Voltage VDD: 32 to +0 Vdc; (4)Storage Temperature Range Tstg: - 65 to +150 ℃; (5)Case Operating Temperature TC: 150 ℃; (6)Operating Junction Temperature TJ: 225 ℃.
Features
MRFE6S9060NR1 features: (1)Characterized with Series Equivalent Large-Signal Impedance Parameters; (2)Integrated ESD Protection; (3)225℃ Capable Plastic Package; (4)RoHS Compliant; (5)In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.
Diagrams
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 MRFE6S9060NR1 |
Freescale Semiconductor |
Transistors RF MOSFET Power HV6E 60W TO270-2N FET |
Data Sheet |
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