Product Summary
The BSP125 is a SIPMOS Power-Transistor.
Parametrics
BSP125 absolute maximum ratings: (1)Continuous drain current, TA=25℃, Id: 0.12A; (2)Continuous drain current, TA=70℃, Id: 0.1A; (3)Pulsed drain current, TA=25℃, IDpuls: 0.48A ; (4)Reverse diode dv/dt, IS=0.17A, VDS=320V, di/dt=200A/μs, Tjmax=175℃, dv/dt: 6kV/μs ; (5)Gate source voltage, VGS: ±20V; (6)ESD Sensitivity (HBM) as per MIL-STD 883: Class 1; (7)Power dissipation, TA=25℃, Ptot: 1.8W; (8)Operating and storage temperature, Tj, Tstg: -55 to +150℃; (9)IEC climatic category, DIN IEC 68-1: 55/150/56℃.
Features
BSP125 features: (1)N-Channel; (2)Enhancement mode; (3)Logic Level; (4)dv/dt rated.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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BSP125 |
Other |
Data Sheet |
Negotiable |
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BSP125 E6327 |
MOSFET N-CH 600V 120MA SOT-223 |
Data Sheet |
Negotiable |
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BSP125 E6433 |
MOSFET N-CH 600V 120MA SOT-223 |
Data Sheet |
Negotiable |
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BSP125 L6327 |
Infineon Technologies |
MOSFET SIPMOS PWR-TRNSTR |
Data Sheet |
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BSP125 L6433 |
Infineon Technologies |
MOSFET SIPMOS PWR-TRNSTR |
Data Sheet |
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