Product Summary

The BSP125 is a SIPMOS Power-Transistor.

Parametrics

BSP125 absolute maximum ratings: (1)Continuous drain current, TA=25℃, Id: 0.12A; (2)Continuous drain current, TA=70℃, Id: 0.1A; (3)Pulsed drain current, TA=25℃, IDpuls: 0.48A ; (4)Reverse diode dv/dt, IS=0.17A, VDS=320V, di/dt=200A/μs, Tjmax=175℃, dv/dt: 6kV/μs ; (5)Gate source voltage, VGS: ±20V; (6)ESD Sensitivity (HBM) as per MIL-STD 883: Class 1; (7)Power dissipation, TA=25℃, Ptot: 1.8W; (8)Operating and storage temperature, Tj, Tstg: -55 to +150℃; (9)IEC climatic category, DIN IEC 68-1: 55/150/56℃.

Features

BSP125 features: (1)N-Channel; (2)Enhancement mode; (3)Logic Level; (4)dv/dt rated.

Diagrams

BSP125 simplified diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BSP125
BSP125
Other

Data Sheet
Negotiable 
BSP125 E6327
BSP125 E6327

MOSFET N-CH 600V 120MA SOT-223
Data Sheet
Negotiable 
BSP125 E6433
BSP125 E6433

MOSFET N-CH 600V 120MA SOT-223
Data Sheet
Negotiable 
BSP125 L6433
BSP125 L6433
Infineon Technologies
MOSFET SIPMOS PWR-TRNSTR
Data Sheet
0-1: $0.60
1-10: $0.50
10-100: $0.41
100-500: $0.37
BSP125 L6327
BSP125 L6327
Infineon Technologies
MOSFET SIPMOS PWR-TRNSTR
Data Sheet
0-1: $0.60
1-10: $0.53
10-100: $0.47
100-250: $0.37