Product Summary
The NTA4151PT1G is a Small Signal MOSFET.
Parametrics
NTA4151PT1G absolute maximum ratings: (1)Drain.to.Source Voltage: -20 V; (2)Gate.to.Source Voltage: ±6.0 V; (3)Continuous Drain Current: -760 mA; (4)Power Dissipation: SC-75: 301mW; SC-89: 313mW; (5)Pulsed Drain Current: ±1000mA; (6)Operating Junction and Storage Temperature: -55 to 150℃; (7)Continuous Source Current (Body Diode): -250mA; (8)Lead Temperature for Soldering Purposes: 260℃; (9)Gate to Source ESD Rating: ESD 1800 V.
Features
NTA4151PT1G features: (1)Low RDS(on) for Higher Efficiency and Longer Battery Life; (2)Small Outline Package (1.6 x 1.6 mm); (3)SC-75 Standard Gullwing Package; (4)ESD Protected Gate; (5)Pb-Free Packages are Available.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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NTA4151PT1G |
ON Semiconductor |
MOSFET -20V -760mA PChannel |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
NTA4151PT1 |
ON Semiconductor |
MOSFET -20V -760mA PChannel |
Data Sheet |
Negotiable |
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NTA4151PT1G |
ON Semiconductor |
MOSFET -20V -760mA PChannel |
Data Sheet |
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NTA4153NT1G |
ON Semiconductor |
MOSFET 20V 915mA N-Channel |
Data Sheet |
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NTA4153NT1 |
ON Semiconductor |
MOSFET 20V 915mA N-Channel |
Data Sheet |
Negotiable |
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NTA4001NT1G |
ON Semiconductor |
MOSFET 20V 238mA N-Channel |
Data Sheet |
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NTA4001NT1 |
ON Semiconductor |
MOSFET 20V 238mA N-Channel |
Data Sheet |
Negotiable |
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