(Hong Kong)
Product Summary
The IRF7309 is HEXFET@Power MOSFET. Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. It has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications.
Parametrics
Absolute maximum ratings:(1)10 Sec. Pulse Drain Current, VGS @ 10V:N-Channel:4.7A,P-Channel:-3.5A;(2)Continuous Drain Current, VGS @ 10V:N-Channel:4.0A,P-Channel:-3.0A;(3)Continuous Drain Current, VGS @ 10V:N-Channel:3.2A,P-Channel:-2.4A;(4)Pulsed Drain Current:N-Channel:16A,P-Channel:-12A;(5)Pulsed Drain Current:1.4W;(6)Linear Derating Factor (PCB Mount):0.011W/°C;(7)Gate-to-Source Voltage:± 20V;(8)Peak Diode Recovery dv/dt:N-Channel:6.9V/ns,P-Channel:-6.0V/ns;(9)Junction and Storage Temperature Range:-55°C to +150°C.
Features
Features:(1)Generation V Technology;(2)Generation V Technology;(3)Dual N and P Channel Mosfet;(4)Surface Mount;(5)Available in Tape & Reel;(6)Dynamic dv/dt Rating;(7)Dynamic dv/dt Rating.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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 IRF7309 |
International Rectifier |
MOSFET N+P 30V 3A 8-SOIC |
Data Sheet |
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IRF7309IPBF |
International Rectifier |
MOSFET |
Data Sheet |
Negotiable |
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IRF7309PBF |
International Rectifier |
MOSFET |
Data Sheet |
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IRF7309QPBF |
International Rectifier |
MOSFET |
Data Sheet |
Negotiable |
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IRF7309QTRPBF |
International Rectifier |
MOSFET |
Data Sheet |
Negotiable |
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IRF7309Q |
Other |
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Data Sheet |
Negotiable |
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IRF7309TRPBF |
International Rectifier |
MOSFET MOSFT DUAL N/PCh 30V 4.0A |
Data Sheet |
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IRF7309TR |
International Rectifier |
MOSFET N+P 30V 3A 8-SOIC |
Data Sheet |
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