Product Summary
The MBRA320T3G is a Surface Mount Schottky Power Rectifier Employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. The MBRA320T3G is ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity diodes in surface mount applications where compact size and weight are critical to the system.
Parametrics
MBRA320T3G absolute maximum ratings: (1)Peak Repetitive Reverse Voltage,Working Peak Reverse, Voltage DC Blocking Voltage: 20 V; (2)Average Rectified Forward Current (At Rated VR, TL = 100℃); (3)IO: 3.0 A; (4)Non-Repetitive Peak Surge Current(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz): 80 A; (5)Storage Temperature Tstg: -65 to +150 ℃; (6)Operating Junction Temperature TJ: -65 to +125 ℃; (7)Voltage Rate of Change (Rated VR, TJ = 25℃) dv/dt: 10,000V/μs.
Features
MBRA320T3G features: (1)Small Compact Surface Mountable Package with J-Bent Leads; (2)Rectangular Package for Automated Handling; (3)Highly Stable Oxide Passivated Junction; (4)Very Low Forward Voltage Drop; (5)Guardring for Stress Protection; (6)Pb-Free Package is Available.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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MBRA320T3G |
ON Semiconductor |
Schottky (Diodes & Rectifiers) 3A 20V |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
MBRA100 |
Other |
Data Sheet |
Negotiable |
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MBRA1100T3 |
Other |
Data Sheet |
Negotiable |
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MBRA120 |
Other |
Data Sheet |
Negotiable |
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MBRA120ET3 |
ON Semiconductor |
Schottky (Diodes & Rectifiers) 1A 20V |
Data Sheet |
Negotiable |
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MBRA120ET3G |
ON Semiconductor |
Schottky (Diodes & Rectifiers) 1A 20V |
Data Sheet |
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MBRA120LT3 |
DIODE SCHOTTKY 20V 1A SMA |
Data Sheet |
Negotiable |
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