(Hong Kong)
Product Summary
The NTD24N06T4G is a Power MOSFET. It is Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.
Parametrics
NTD24N06T4G absolute maximum ratings: (1)Drain to Source Voltage VDSS: 60 Vdc; (2)Drain to Gate Voltage (RGS = 10 MΩ) VDGR: 60 Vdc; (3)Gate to Source Voltage: Continuous, ±20V; Non-repetitive (tp≤10 ms): ±30Vdc; (4)Drain Current, Continuous @ TA = 25℃, TJ = 150℃: 24 Adc; Continuous @ TA = 25℃, TJ = 175℃: 27Adc; Continuous @ TA = 100℃, TJ = 175℃: 19 Adc; Single Pulse (tp≤10μs), TJ = 175℃: 80Adc; (5)Total Power Dissipation @ TA = 25℃: 0.42 W/℃; Derate above 25℃: 62.5 W; (6)Total Power Dissipation @ TA = 25℃: 1.88 W; (7)Total Power Dissipation @ TA = 25℃: 1.36 W; (8)Operating and Storage Temperature Range TJ, Tstg: -55 to; (9)+175 ℃; (10)Single Pulse Drain to Source Avalanche Energy Starting TJ = 25℃ (VDD = 50 Vdc, VGS = 10 Vdc, L = 1.0 mH, IL(pk) = 18 A, VDS = 60 Vdc), EAS: 162 mJ; (11)Thermal Resistance, Junction to Case: 2.4 ℃/W; Junction to Ambient: 80℃/W; Junction to Ambient: 110℃/W; (12)Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds, TL: 260 ℃.
Features
NTD24N06T4G features: (1)Temperature Coefficient: 70.4 mV/℃; (2)Gate.Body Leakage Current: ±100 nAdc; (3)Threshold Temperature Coefficient: 7.0 mV/℃; (4)Forward Transconductance: 15 mhos; (5)Reverse Recovery Time: 49 ns; (6)Reverse Recovery Stored Charge: 0.096 μC.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 NTD24N06T4G |
ON Semiconductor |
MOSFET 24V 60A N-Channel |
Data Sheet |
|
|
||||||||||||
| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
|
NTD20N03L27 |
ON Semiconductor |
MOSFET 30V 20A N-Channel |
Data Sheet |
Negotiable |
|
||||||||||||
|
NTD20N03L27-001 |
ON Semiconductor |
MOSFET 30V 20A N-Channel |
Data Sheet |
Negotiable |
|
||||||||||||
|
NTD20N03L27-1G |
ON Semiconductor |
MOSFET 30V 20A N-Channel |
Data Sheet |
Negotiable |
|
||||||||||||
|
NTD20N03L27G |
ON Semiconductor |
MOSFET 30V 20A N-Channel |
Data Sheet |
Negotiable |
|
||||||||||||
|
NTD20N03L27T4 |
ON Semiconductor |
MOSFET 30V 20A N-Channel |
Data Sheet |
Negotiable |
|
||||||||||||
|
NTD20N03L27T4G |
ON Semiconductor |
MOSFET 30V 20A N-Channel |
Data Sheet |
|
|
||||||||||||
