(Hong Kong)
Product Summary
The BSS123 is a N-channel enhancement mode vertical D-MOS transistor in a SOT23 envelope, intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers.
Parametrics
BSS123 absolute maximum ratings: (1)VDS drain-source voltage: 100 V; (2)±VGSO gate-source voltage: 20 V; (3)ID drain current DC value: 150 mA; (4)IDM drain current: 600 mA; (5)Ptot total power dissipation up to Tamb = 25 ℃: 250 mW; (6)Tstg storage temperature range: 65 to 150 ℃; (7)Tj junction temperature: 150 ℃.
Features
BSS123 features: (1)Direct interface to C-MOS, TTL, etc.; (2)High-speed switching; (3)No secondary breakdown.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 BSS123 H6327 |
Infineon Technologies |
MOSFET CHIPLIEFERUNGEN |
Data Sheet |
Negotiable |
|
||||||||||||
 |
BSS123 L6327 |
Infineon Technologies |
MOSFET N-CH 100V 0.17A |
Data Sheet |
|
|
||||||||||||
|
BSS123 L6433 |
Infineon Technologies |
MOSFET SIPMOS Sm-Signal Transistor 100V .17A |
Data Sheet |
|
|
||||||||||||
|
BSS123 L7874 |
Infineon Technologies |
MOSFET SIPMOS Sm-Signal Transistor 100V .17A |
Data Sheet |
Negotiable |
|
||||||||||||
|
BSS123(Z) |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
|
BSS123_Q |
Fairchild Semiconductor |
MOSFET SOT-23 N-CH LOGIC |
Data Sheet |
Negotiable |
|
||||||||||||
|
BSS123A |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
 |
BSS123LT1G |
ON Semiconductor |
MOSFET 100V 170mA N-Channel |
Data Sheet |
|
|
||||||||||||
