(Hong Kong)
Product Summary
The N-Channel enhancement mode power field effect transistor FQP10N60C is produced using Fairchilds proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. The FQP10N60C is well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
Parametrics
FQP10N60C absolute maximum ratings: (1)Drain-Source Voltage: 600 V; (2)ID, Drain Current - Continuous (TC = 25℃): 9.5 A; Continuous (TC = 100℃): 5.7 A; (3)IDM, Drain Current - Pulsed: 38 A; (4)VGSS, Gate-Source Voltage: ± 30 V; (5)EAS, Single Pulsed Avalanche Energy: 700 mJ; (6)IAR, Avalanche Current: 9.5 A; (7)EAR, Repetitive Avalanche Energy: 15.6 mJ; (8)dv/dt, Peak Diode Recovery dv/dt: 4.5 V/ns; (9)PD, Power Dissipation (TC = 25℃): 156 W; Derate above 25℃: 1.25 W/℃; (10)TJ, TSTG, Operating and Storage Temperature Range: -55 to +150 ℃; (11)TL, Maximum lead temperature for soldering purposes, 1/8. from case for 5 seconds: 300 ℃.
Features
FQP10N60C features: (1)9.5A, 600V, RDS(on) = 0.73Ω @VGS = 10 V; (2)Low gate charge ( typical 44 nC); (3)Low Crss ( typical 18 pF); (4)Fast switching; (5)100% avalanche tested; (6)Improved dv/dt capability.
Diagrams
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 FQP10N60C |
Fairchild Semiconductor |
MOSFET 600V N-Ch Q-FET advance C-Series |
Data Sheet |
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FQP10N60C_Q |
Fairchild Semiconductor |
MOSFET 600V N-Ch Q-FET advance C-Series |
Data Sheet |
Negotiable |
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