(Hong Kong)
Product Summary
The MMBT3904LT1G is a general purpose transistor with NPN silicon.
Parametrics
MMBT3904LT1G maximum ratings: (1)Collector.Emitter Voltage: 40 Vdc; (2)Collector.Base Voltage: 60 Vdc; (3)Emitter.Base Voltage: 6.0 Vdc; (4)Collector Current-Continuous: 200 mAdc; (5)Thermal Resistance Junction to Ambient: 556℃/W; (6)Junction and Storage Temperature: -55 to +150℃.
Features
MMBT3904LT1G features: Pb-Free Packages are Available.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 MMBT3904LT1G |
ON Semiconductor |
Transistors Bipolar (BJT) NPN GENERAL PURPOSE |
Data Sheet |
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MMBT3904LT1G ON 08+ |
Other |
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Data Sheet |
Negotiable |
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